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Publications
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2010 [1] J.-W. Lee and S.-H. Hwang, “+17 dBm High Efficiency CMOS Power Amplifiers Operating at High Voltage for a 24 GHz Radar Sensor," IEE Proceedings, Circuits, Devices & System, 2010, to be published [2] J.-W. Lee and S.-G. Lee, "Millimeter-Wave CMOS Power Amplifier based on Tapered Device Sizing for High Efficiency Using Standard Digital CMOS ," Microwave and Optical Technology Letters, vol. 52, no 3. 2010, pp. 514-517. [3] T.-N. Nguyen and J.-W. Lee, “Low Phase Noise Differential Vackar VCO in 0.18 um CMOS Technology," IEEE Microwave and Wireless Components Letters, 2010, vol. 20, no 2. 2010, pp. 88-90. [4] N. Tran and J.-W. Lee, “A New Simple High Sensitivity Voltage Multiplier for UHF-band Semi-passive RFID Tags Using a Standard CMOS Process ,” IEE Proceedings, Microwaves, Antennas, Propagation, accept with revision. 2009 [1] J.-W. Lee and B. Lee, "A Long Range UHF-band Passive RFID Tag IC Based on High-Q Design Approach," IEEE Transactions on Industrial Electronics, vol. 56, No. 7, pp. 2308-2316, July 2009. [2] C.-H. Han, J.-W. Lee, and S.-H. Hong, " Intra and Inter temperature measurement BIST for SiP module using a digital frequency analyzer circuit ," Electronics Letters, vol. 45, no. 24, Nov. 2009, pp. 1221-1223 [3] Quoc-Tai Duong, Duong Huynh Thai Vo, Quoc-Hung Huynh, Jong-Wook Lee, Sang-Hoon Hong, "High Dynamic Range Power Regulator Design for UHF band Near-field Passive RFID Tag Chips," International SoC Design Conference(ISOCC), 2009, pp. 112-115 [4] Tai Nghia Nguyen, Seong Gwon Lee, Nguyen Bao Anh, Sang-Hyun Hwang, Jong-Wook Lee, and Byung-Sung Kim, “Millimeter-wave CMOS circuit building blocks for high data rate wireless transceivers ,” IEEE International Conference on ASIC (IEEE ASICON), 2009, pp.297-298. (invited) 2008 [1] J.-W. Lee and B. Lee, “Design of High-Q UHF RFID Tag Antennas for an Increased Read Range,” IET Proceedings, Microwaves, Antennas, Propagation, 2008. [2] J.-W. Lee, A. Kuliev, and I. Adesida, " Short-channel AlGaN/GaN Field-plated HEMTs for X-band High Power Operation," Japanese Journal of Applied Physics, Vol. 47, No. 3, pp. 1479-1483, 2008. [3] J.-W. Lee and S.-M. Heo, “A 27 GHz, 14 dBm CMOS Power Amplifier Using 0.18 um Common-Source MOSFETs,” IEEE Microwave and Wireless Components Letters, Nov. 2008. [4] J.-W. Lee, Bomson Lee, and H.-B. Kang, “A High Sensitivity, CoSi2-Si Schottky Diode Voltage Multiplier for UHF-band Passive RFID Tag Chips,” IEEE Microwave and Wireless Components Letters, 2008. [5] S.-M. Heo and J.-W. Lee , "A Ka-band CMOS Power Amplifier Using New Substrate-shielded Coplanar Waveguide ," Microwave and Optical Technology Letters, Nov. 2008. [6] Sang-Moo Heo and Jong-Wook Lee, "Ka-band Power Amplifiers for Short-range Wireless Communication in 0.18-㎛ CMOS Process," Journal of the Institute of Electronics Engineers of Korea, April 2008. [7] Duy-Dong Pham and Jong-Wook Lee, "A UHF-band Passive Temperature Sensor Tag Chip Fabricated in 0.18-㎛ CMOS Process," Journal of the Institute of Electronics Engineers of Korea, Oct. 2008. [8] Sang-Moo Heo, Seong-Kwon Lee, and Jong-Wook Lee, "Ka-band power amplifier using substrate-shielded transmission line in 0.18 um CMOS technology," The 15th Korean Conference on Semiconductors, pp. 59-60, 2008. [9] Duy-Dong Pham, Nhan Tran, Bomson Lee, and Jong-Wook Lee, "A new current mode ASK demodulator using adaptive current reference for UHF-band RFID tag," The 15th Korean Conference on Semiconductors, pp. 914-915, 2008. [10] Nhan Tran, Duy-Dong Pham, Bomson Lee, and Jong-Wook Lee, "A new high sensitivity voltage multiplier for UHF-band semi-passive tags using standard CMOS process," The 15th Korean Conference on Semiconductors, pp. 603-604, 2008. [11] Hyo-Jong Kim, Bokki Kim, Jong-Wook Lee, Design of Wide Bandwidth Digital FM Modulator, Asia-Pacific Microwave Conference (APMC), 2008. [12] Sang-Hyun Hwang, Seong-Gwon Lee, Byung-Sung Kim, and Jong-Wook Lee, “Millimeter-wave CMOS Power Amplifiers in Common-source MOSFETs”, International SoC Design Conference(ISOCC), 2008. [13] Sang-Hyun Hwang, Seong Gwon Lee, Byung-Sung Kim, and Jong-Wook Lee, “Q-band and Ka-band CMOS Power Amplifiers Using Substrate Shielded Microstrip line,” The 8th RF Integrated Circuit Technology Workshop, 2008. [14] Tai Nghia Nguyen, Tai Quoc Duong, and Jong-Wook Lee, “A Low Power Voltage Controlled Oscillator based on Bandwidth Enhancement Technique,” The 8th RF Integrated Circuit Technology Workshop, 2008. 2007 [1] J.-W. Lee, S.-W. Kim, K.-S. Seol, Y. Kwon, and K.-S. Seo, "High Power 60 GHz Push-Push Oscillator Using InAlAs/InGaAs Metamorphic HEMT Technology," Microwave and Optical Technology Letters, Vol. 49, No. 3, March, pp. 609-612, 2007. [2] J. Ahn, H. Jang, H. Moon, J.-W. Lee, and B. Lee, “Inductively-Coupled Compact RFID Tag Antenna at 910MHz with Near-Isotropic RCS (Radar Cross Section) Patterns,” IEEE Antennas and Wireless Propagation Letters, vol. 6, 2007, pp. 518-520. [3] Hyosang Moon, Namhoon Kim Jong-Wook Lee, and Bomson Lee "Analysis and Measurement of RCS for UHF Band RFID Tag Antennas,” The Journal of Korea Electromagnetic Engineering Society, vol. 18, no. 1, 2007, pp. 31-36. [4] Jong-Wook Lee and Bomson Lee, "Characterization of Schottky Diodes and Design of Voltage Multiplier for UHF-band Passive RFID Transponder," Journal of the Institute of Electronics Engineers of Korea, vol. 44, no.7, July. 2007. [5] Nhan Tran, Bomson Lee, and Jong.-Wook. Lee, "Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology," IEEE Radio Frequency Integrated Circuit (RFIC) Symposium, 2007, pp. 281-284. [6] Sang-Moo Heo and Jong-Wook Lee, “Characterization of CMOS Devices and Application to Ku-band Power Amplifier ,” International Technical Conference on Circuits/Systems, Computers and Communication (ITC-CSCC), 2007, pp.297-298. [7] Nhan Tran, Duy-Dong Pham, Bomson Lee, and Jong-Wook Lee , "System Clock Generator With Digital Calibration in RFID Tag Chip," International Technical Conference on Circuits/Systems, Computers and Communication (ITC-CSCC), 2007, pp. 291-292. [8] Duy-Dong Pham, Nhan Tran, and Jong-Wook Lee, " Wireless Powered, Addressable Temperature Sensor Using On-Chip ADC In 0.18 um CMOS ," International Technical Conference on Circuits/Systems, Computers and Communication (ITC-CSCC), 2007, pp. 293-294. [9] Nhan Tran, Nghia-Tai Nguyen, and Jong-Wook Lee, "UHF-band Semi-Passive RFID Tag Chip Using New High Sensitivity Voltage Multiplier in Standard CMOS," International SoC Design Conference (ISOCC), 2007, pp. 279-282. [10] Duy-Dong Pham, Nhan Tran, Nghia-Tai Nguyen, and Jong-Wook Lee, "A Remotely Powered, Wireless CMOS Temperature Sensor for Environmental Monitoring," International SoC Design Conference (ISOCC), 2007, pp. 343-346. 2006 [1] J.-W. Lee, V. Kumar, and I. Adesida, "High-Power-Density 0.25 um Gate-Length AlGaN/GaN HEMTs on Semi-Insulating 6H-SiC Substrates," Japanese Journal of Applied Physics, Vol. 45, No. 1A, pp. 13-17, 2006. [2] T.-H. Gil, H.-S. Kim, J.-W. Lee, and Y.-S. Kim, "Characterisitics of Ni/SiC Schottky diodes grown by ICP-CVD," Solid-State Electronics, vol. 50, 2006, pp. 1510-1514. [3] J.-W. Lee, "Design and Characterization of a High Power 60 GHz Push-Push Oscillator using Metamorphic HEMT Technology ," The Journal of Korea Electromagnetic Engineering Society, vol. 17, no. 7, 2006, pp. 659-664. [4] J.-W. Lee, H. Kwon, B. Lee, "Design Consideration of UHF RFID Tag for Increased Reading Range," IEEE MTT-S International Microwave Symposium, 2006, pp. 1588-1591. [5] N. Kim, H. Kwon, J.-W. Lee, and B. Lee, "Performance Analysis of RFID Tag Antenna at UHF (911MHz) Band," IEEE Antennas and Propagation Society International Symposium, 2006, pp. 3275-3278. [6] J.-W. Lee, S.-W. Kim, K.-S. Seol, and K.-S. Seo, "A High Power Performance 60 GHz Push-Push Oscillator MMIC in Metamorphic HEMT Technology," Asia-Pacific Microwave Conference (APMC), Yokohama, 2006, pp. 453-456. [7] Nhan Tran, Dong Pham Duy, Bomson Lee, and Jong-Wook Lee, “Analog Front-end Design of UHF-band RFID Tag Using High Quality Factor Schottky Diodes,” International SoC Design Conference (ISOCC), 2006, pp. 163-166. [8] Nhan Tran, Bomson Lee, and Jong-Wook Lee, “Analog Front-end Design of UHF-band Semi-passive RFID Tag,” International Technical Conference on Circuits/Systems, Computers and Communication (ITC-CSCC), 2006, vol.2 pp.149-152. [9] N. Kim, J.-W. Lee and B. Lee,"Performance evaluation of inductively coupled RFID tag using radar cross section," 2006 Korea-Japan Joint Conference, pp. 81-85, Ishikawa, Japan. [10] Nhan Tran, Bomson Lee, and Jong-Wook Lee, “Analog Front-end Design of UHF-band Sensor Network Tag,” IEEK 2006 SoC conference. [11] J.-W. Lee, S.-W. Kim, K.-W. Kim, K.-S. Seol, Y.-W. Kwon, K.-S. Seo, "A high power 60 GHz push-push oscillator using 0.12 um metamorphic HEMTs," Proceedings of IEEK Summer Conference, Vol. 29, No. 1, pp. 495-498, 2006. 2005 [1] J.-W. Lee and I. Adesida, "Gallium Nitride for Electronics ", Encyclopedia of RF and Microwave Engineering, John Wiley & Sons, Inc, vol. 2, pp. 1758-1767, 2005. [2] R. Schwindt, V. Kumar, O. Aktas, J.-W. Lee, and I. Adesida, "AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier," Physica Status Solidi, vol. 2, No. 7, pp. 2631-2634, May, 2005. [3] H. Kwon, J.-W. Lee, B. Lee, "Analysis of Performance Elements of Passive RFID Tag Antennas," Proceedings of KEES Conference, vol. 15, No. 1, pp. 241-244, 2005. [4] J.-W. Lee, H. Kwon, and B. Lee, "Impedance Tuning and Matching Characteristics of UHF RFID Tag for Increased Reading Range," Proceedings of KEES Conference, vol. 15, No. 1, pp. 279-284, 2005. [5] J.-W. Lee and B. Lee, "Design Consideratin of the Voltage Multiplier of UHF RFID Tag for Increased Reading Range," Proceedings of IEEK Fall Conference, Vol. 28, No. 2, pp. 587-590, 2005. 2004 [1] J.-W. Lee and K. J. Webb, "A Temperature-Dependent Nonlinear Analytic Model for AlGaN/GaN HEMTs on SiC," IEEE Transactions on Microwave Theory and Techniques, vol. 52, no. 1, pp. 2-9, 2004. [2] J.-W. Lee, A. Kuliev, V. Kumar, R. Schwindt, and I. Adesida, " Microwave noise Characteristics of AlGaN/GaN HEMTs on SiC substrates for Broad-band Low Noise Amplifiers," IEEE Microwave and Wireless Components Letters, vol. 14, No. 6, pp.259-261, June, 2004. [3] W. Lanford, J.-W. Lee, V. Kumar, R. Schwindt, A. Kuliev, A. M. Dabiran, A. M. Wowchak, and P. P. Chow, and I. Adesida, "AlGaN/InGaN HEMTs for RF Current Collapse Suppression," Electronics Letters, Vol. 40, No. 12, pp. 771-772, 2004 [4] J.-W. Lee, V. Kumar, R. Schwindt, A. Kuliev, R. Birkhahn, D. Gotthold, S. Guo, B. Albert, and I. Adesida, "Microwave Noise Performances of AlGaN/GaN HEMTs on Semi-Insulating 6H-SiC Substrates," Electronics Letters, Vol. 40, No. 1, pp. 80-81, 2004. [5] J.-W. Lee, "DC and RF Characteristics of AlGaN/InGaN HEMTs Grown by Plasma-Assisted MBE," Journal of Korea Electromagnetic Engineering Society, vol. 15, no. 8, Aug. 2004, pp. 752-758. [6] J.-W. Lee, "RF Dispersion and Linearity Characteristics of AlGaN/InGaN/GaN HEMTs," Journal of the Institute of Electronics Engineers of Korea, vol. 41, no. 11, Nov. 2004, pp. 993-998. [7] R.S. Schwindt, V. Kumar, O. Aktas, J.-W. Lee, and I. Adesida, "Temperature-dependence of a GaN-based HEMT monolithic X-band low low noise amplifier," IEEE Compound Semiconductor IC Symposium, pp. 201-203, Monterey, CA, USA, Oct 2004. [8] I. Adesida, V. Kumar, J.-W. Lee, A. Kuliev, R. Schwindt, and W. Lanford, "GaN Electronics with High Electron Mobility Transistors," Proc. 24th International Conference on Microelectronics (MIEL 2004), Vol. 1, pp. 89-96, May 2004 (Invited). [9] R. Schwindt, V. Kumar, O. Aktas, J.-W. Lee, and I. Adesida, "AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier," International Workshop on Nitride Semiconductors, Pennsylvania, USA, July, 2004. 2003 - 2002 [1] J.-W. Lee, L. F. Eastman, and K. J. Webb, "Gallium Nitride Push-Pull Microwave Power Amplifiers," IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 11, pp. 2243-2249, Nov., 2003. [2] V. Kumar, J.-W. Lee, A. Kuliev, O. Atkas, R. Schwindt, R. Birkhahn, D. Gotthold, S. Guo, B. Albert, and I. Adesida, " High Performance 0.25 um gate-length AlGaN/GaN HEMTs on 6H-SiC with Power Density of 6.7 W/mm at 18 GHz," Electronics Letters, Vol. 39, No. 22, pp. 1609-1610, Oct., 2003. [3] J.-W. Lee and K. J. Webb, "Broadband Push-Pull Microwave Power Amplifier Using AlGaN/GaN HEMTs on SiC," Materials Science forum, Vol. 389-393, pp.1515-1518, 2002. [4] J.-W. Lee and K. J. Webb, "Analysis and Design of Low-Loss Planar Microwave Balun Having Three Symmetrical Coupled Lines," IEEE MTT-S International Microwave Symposium, Seattle, WA, June, 2002. 2001 and before [1] J.-W. Lee and K. J. Webb, "Broadband GaN HEMT Push-Pull Microwave Power Amplifier," IEEE Microwave and Wireless Components Letters, vol. 11, No. 9, pp.367-369, Sept., 2001. [2] K.-Y. Choi, J.-W. Lee and M.-K. Han, "Gate-Overlapped Lightly Doped Drain Poly-Si Thin-Film Transistors for Large Area-AMLCD," IEEE Transactions on Electron devices, vol. 45, No. 6, pp. 1272-1279, June 1998.
[3] J.-W. Lee, S. Lee, and K. J. Webb, "Demonstration of Push-Pull Operation of AlGaN/GaN HEMTs on SiC," 59th Device Research Conference (DRC), pp.203-204, June, 2001.
[4] J.-W. Lee, S. Lee, and K. J. Webb, "Scalable Large-Signal Device Model for High Power-Density AlGaN/GaN HEMTs on SiC," IEEE MTT-S International Microwave Symposium, Phoenix, AZ, pp. 679-682, May, 2001.
[5] J.-W. Lee and K. J. Webb, "A Low-Loss Planar Microwave Balun with an Integrated Bias Scheme for Push-Pull Amplifiers," IEEE MTT-S International Microwave Symposium, Phoenix, AZ, pp. 197-200, May, 2001.
[6] J.-W. Lee, B. M. Green, S. Lee, V. Tilak, J. R. Shealy, L. F. Eastman, and K. J. Webb, "A Broadband GaN Push-Pull Distributed Microwave Power Amplifier," International Semiconductor Device Research Symposium, Washington DC, 2001.
[7] J.-W. Lee and Kevin J. Webb, " Broadband Push-Pull Microwave Power Amplifier Using AlGaN/GaN HEMTs on SiC," International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan, Oct., 2001.
[8] S. Lee, B. M. Green, J.-W. Lee, K. J. Webb, and L. F. Eastman, "High Efficiency GaN Cascode-Connected HEMT Non-uniform Distributed amplifier," IEEE/Cornell Conference in High Performance Devices, Ithaca, NY, 2000, pp. 79-83.
[9] K.Y. Choi, J.-.W. Lee, H.S. Choi, J.S. Yoo, M.K. Han, and Y.S. Kim, "Effects of two-step annealing on the characteristics of the low temperature polycrystalline silicon thin film transistors," Physica Scripta, Vol. T69, pp.131-133, 1997. [10] K.-Y. Choi, J.-W. Lee, H.-B. Choi, J.-H. Jeon, M.-K. Han, and Y.-S. Kim, "A Novel Method for Fabrication of Hydrogenated Amorphous Silicon and High Quality Poly Silicon Films on the Same Substrate by Employing Excimer Laser," Spring Meeting Materials Research Society, 1997 [11] K.-Y. Choi, J.-W. Lee, M.-K. Han, and B.-S. Bae, "A New Gate-Overlapped LDD Poly-Si Thin-Film Transistors," International Conference on Solid State Devices and Materials (SSDM'96), 1996, Yokohama, Japan, pp. 290-292.
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